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  5. FQP7N80

ON Semiconductor - FQP7N80

KEY Part #: K6410380

[14155pcs Stock]

    Part Number:
    FQP7N80
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 800V 6.6A TO-220.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Thyristors - TRIACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Single ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQP7N80 electronic components. FQP7N80 can be shipped within 24 hours after order. If you have any demands for FQP7N80, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQP7N80 Product Attributes

    Part Number : FQP7N80
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 800V 6.6A TO-220
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 800V
    Current - Continuous Drain (Id) @ 25°C : 6.6A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 3.3A, 10V
    Vgs(th) (Max) @ Id : 5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 52nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 1850pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 167W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220-3
    Package / Case : TO-220-3

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