FDI150N10 Pricing (USD) [41380pcs Stock]
- 1 pcs$0.94491
- 800 pcs$0.48178
- Part Number:
- FDI150N10
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 57A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Power Driver Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDI150N10 electronic components. FDI150N10 can be shipped within 24 hours after order. If you have any demands for FDI150N10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDI150N10 Product Attributes
Part Number :
FDI150N10
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 57A I2PAK
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 49A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4760pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
110W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK (TO-262)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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