Vishay Semiconductor Diodes Division - SB2J-M3/5BT

KEY Part #: K6427429

SB2J-M3/5BT Pricing (USD) [917415pcs Stock]

  • 1 pcs$0.04254
  • 16,000 pcs$0.04233

Part Number:
SB2J-M3/5BT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 2A DO214AA. Rectifiers 2A, 600V, GPP, STD, SM, RECT
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division SB2J-M3/5BT electronic components. SB2J-M3/5BT can be shipped within 24 hours after order. If you have any demands for SB2J-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SB2J-M3/5BT Product Attributes

Part Number : SB2J-M3/5BT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 2A DO214AA
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 1.15V @ 2A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2µs
Current - Reverse Leakage @ Vr : 1µA @ 600V
Capacitance @ Vr, F : 16pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMB)
Operating Temperature - Junction : -55°C ~ 150°C

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