Vishay Semiconductor Diodes Division - S1BHE3_A/I

KEY Part #: K6433965

S1BHE3_A/I Pricing (USD) [1352051pcs Stock]

  • 1 pcs$0.02736
  • 15,000 pcs$0.02511

Part Number:
S1BHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A 100V 40A@8.3ms Single Die Auto
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division S1BHE3_A/I electronic components. S1BHE3_A/I can be shipped within 24 hours after order. If you have any demands for S1BHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1BHE3_A/I Product Attributes

Part Number : S1BHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A DO214AC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.8µs
Current - Reverse Leakage @ Vr : 1µA @ 100V
Capacitance @ Vr, F : 12pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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