Vishay Siliconix - IRF9Z14PBF

KEY Part #: K6399969

IRF9Z14PBF Pricing (USD) [83500pcs Stock]

  • 1 pcs$0.42228
  • 10 pcs$0.37504
  • 100 pcs$0.28033
  • 500 pcs$0.21740
  • 1,000 pcs$0.17163

Part Number:
IRF9Z14PBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 60V 6.7A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - Special Purpose and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Vishay Siliconix IRF9Z14PBF electronic components. IRF9Z14PBF can be shipped within 24 hours after order. If you have any demands for IRF9Z14PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF9Z14PBF Product Attributes

Part Number : IRF9Z14PBF
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 60V 6.7A TO-220AB
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 25V
FET Feature : -
Power Dissipation (Max) : 43W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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