DMN1032UCB4-7 Pricing (USD) [371913pcs Stock]
- 1 pcs$0.09945
- 3,000 pcs$0.08901
- Part Number:
- DMN1032UCB4-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 12V 4.8A U-WLB1010-4.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Thyristors - SCRs, Diodes - Zener - Single, Thyristors - SCRs - Modules, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN1032UCB4-7 electronic components. DMN1032UCB4-7 can be shipped within 24 hours after order. If you have any demands for DMN1032UCB4-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN1032UCB4-7 Product Attributes
Part Number :
DMN1032UCB4-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 12V 4.8A U-WLB1010-4
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
900mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
U-WLB1010-4
Package / Case :
4-UFBGA, WLBGA
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