ON Semiconductor - FDB2532-F085

KEY Part #: K6399278

FDB2532-F085 Pricing (USD) [32117pcs Stock]

  • 1 pcs$1.28321

Part Number:
FDB2532-F085
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 150V 79A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in ON Semiconductor FDB2532-F085 electronic components. FDB2532-F085 can be shipped within 24 hours after order. If you have any demands for FDB2532-F085, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB2532-F085 Product Attributes

Part Number : FDB2532-F085
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 150V 79A D2PAK
Series : Automotive, AEC-Q101, PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 107nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5870pF @ 25V
FET Feature : -
Power Dissipation (Max) : 310W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263AB
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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