Vishay Semiconductor Diodes Division - BYWE29-100-E3/45

KEY Part #: K6456798

BYWE29-100-E3/45 Pricing (USD) [205604pcs Stock]

  • 1 pcs$0.18984
  • 3,000 pcs$0.18889

Part Number:
BYWE29-100-E3/45
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 8A TO220AC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYWE29-100-E3/45 electronic components. BYWE29-100-E3/45 can be shipped within 24 hours after order. If you have any demands for BYWE29-100-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYWE29-100-E3/45 Product Attributes

Part Number : BYWE29-100-E3/45
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 8A TO220AC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 20A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 45pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -65°C ~ 150°C

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