IXYS - IXFH6N120

KEY Part #: K6394899

IXFH6N120 Pricing (USD) [12497pcs Stock]

  • 1 pcs$3.64539
  • 30 pcs$3.62726

Part Number:
IXFH6N120
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1200V 6A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - SCRs, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - Programmable Unijunction, Transistors - Special Purpose and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in IXYS IXFH6N120 electronic components. IXFH6N120 can be shipped within 24 hours after order. If you have any demands for IXFH6N120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH6N120 Product Attributes

Part Number : IXFH6N120
Manufacturer : IXYS
Description : MOSFET N-CH 1200V 6A TO-247
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.6 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1950pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AD (IXFH)
Package / Case : TO-247-3