DMN2320UFB4-7B Pricing (USD) [629772pcs Stock]
- 1 pcs$0.05903
- 10,000 pcs$0.05873
- Part Number:
- DMN2320UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 20V X2-DFN1006-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN2320UFB4-7B electronic components. DMN2320UFB4-7B can be shipped within 24 hours after order. If you have any demands for DMN2320UFB4-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2320UFB4-7B Product Attributes
Part Number :
DMN2320UFB4-7B
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 20V X2-DFN1006-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
320 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.89nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
71pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
520mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
X2-DFN1006-3
Package / Case :
3-XFDFN
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