Infineon Technologies - IPB160N04S4H1ATMA1

KEY Part #: K6402046

IPB160N04S4H1ATMA1 Pricing (USD) [82489pcs Stock]

  • 1 pcs$0.47401
  • 1,000 pcs$0.43487

Part Number:
IPB160N04S4H1ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 40V 160A TO263-7.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IPB160N04S4H1ATMA1 electronic components. IPB160N04S4H1ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB160N04S4H1ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB160N04S4H1ATMA1 Product Attributes

Part Number : IPB160N04S4H1ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 40V 160A TO263-7
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs : 137nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10920pF @ 25V
FET Feature : -
Power Dissipation (Max) : 167W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO263-7-3
Package / Case : TO-263-7, D²Pak (6 Leads + Tab)

You May Also Be Interested In
  • VN0109N3-G

    Microchip Technology

    MOSFET N-CH 90V 0.35A TO92-3.

  • ZVN3310ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 200MA TO92-3.

  • BS107PSTZ

    Diodes Incorporated

    MOSFET N-CH 200V 0.12A TO92-3.

  • ZVN2106ASTZ

    Diodes Incorporated

    MOSFET N-CH 60V 0.45A TO92-3.

  • LND150N3-G-P003

    Microchip Technology

    MOSFET N-CH 500V 30MA TO92-3.

  • ZVN2110ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 320MA TO92-3.