Toshiba Semiconductor and Storage - 2SA1163-GR,LF

KEY Part #: K6389946

2SA1163-GR,LF Pricing (USD) [1760237pcs Stock]

  • 1 pcs$0.02112
  • 3,000 pcs$0.02101
  • 6,000 pcs$0.01827
  • 15,000 pcs$0.01553
  • 30,000 pcs$0.01462
  • 75,000 pcs$0.01370
  • 150,000 pcs$0.01218

Part Number:
2SA1163-GR,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS PNP 120V 0.1A SMINI.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - Special Purpose, Diodes - RF and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage 2SA1163-GR,LF electronic components. 2SA1163-GR,LF can be shipped within 24 hours after order. If you have any demands for 2SA1163-GR,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SA1163-GR,LF Product Attributes

Part Number : 2SA1163-GR,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PNP 120V 0.1A SMINI
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini

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