Part Number :
SI4833BDY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CHANNEL 30V 4.6A 8SOIC
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
68 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 15V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
2.75W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOIC
Package / Case :
8-SOIC (0.154", 3.90mm Width)