STI21N65M5 Pricing (USD) [24480pcs Stock]
- 1 pcs$1.68347
- 10 pcs$1.50279
- 100 pcs$1.23229
- 500 pcs$0.94668
- 1,000 pcs$0.79840
- Part Number:
- STI21N65M5
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 650V 17A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Thyristors - SCRs and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in STMicroelectronics STI21N65M5 electronic components. STI21N65M5 can be shipped within 24 hours after order. If you have any demands for STI21N65M5, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI21N65M5 Product Attributes
Part Number :
STI21N65M5
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 17A I2PAK
Series :
MDmesh™ V
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
179 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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