[1516pcs Stock]
- Part Number:
- IRFH8318TR2PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 21A 5X6 PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Transistors - JFETs and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFH8318TR2PBF electronic components. IRFH8318TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH8318TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8318TR2PBF Product Attributes
Part Number :
IRFH8318TR2PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 21A 5X6 PQFN
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3180pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
3.6W (Ta), 59W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PQFN (5x6)
Package / Case :
8-PowerTDFN
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