IRFP4668PBF Pricing (USD) [11516pcs Stock]
- 1 pcs$2.48555
- 10 pcs$2.21804
- 100 pcs$1.81864
- 500 pcs$1.47263
- 1,000 pcs$1.24198
- Part Number:
- IRFP4668PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 130A TO-247AC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Transistors - IGBTs - Modules and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFP4668PBF electronic components. IRFP4668PBF can be shipped within 24 hours after order. If you have any demands for IRFP4668PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFP4668PBF Product Attributes
Part Number :
IRFP4668PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 130A TO-247AC
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.7 mOhm @ 81A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
241nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
10720pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
520W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AC
Package / Case :
TO-247-3
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