[1221pcs Stock]
- Part Number:
- TPCC8A01-H(TE12LQM
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 30V 21A SBD 8TSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPCC8A01-H(TE12LQM electronic components. TPCC8A01-H(TE12LQM can be shipped within 24 hours after order. If you have any demands for TPCC8A01-H(TE12LQM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPCC8A01-H(TE12LQM Product Attributes
Part Number :
TPCC8A01-H(TE12LQM
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 30V 21A SBD 8TSON
Series :
U-MOSV-H
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.9 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
700mW (Ta), 30W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-TSON Advance (3.3x3.3)
Package / Case :
8-PowerVDFN
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