APT45GP120B2DQ2G Pricing (USD) [4228pcs Stock]
- 1 pcs$10.24356
- 10 pcs$9.47356
- 25 pcs$8.70522
- 100 pcs$7.69608
- 250 pcs$7.06285
- Part Number:
- APT45GP120B2DQ2G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- IGBT 1200V 113A 625W TMAX.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Diodes - Bridge Rectifiers and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT45GP120B2DQ2G electronic components. APT45GP120B2DQ2G can be shipped within 24 hours after order. If you have any demands for APT45GP120B2DQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT45GP120B2DQ2G Product Attributes
Part Number :
APT45GP120B2DQ2G
Manufacturer :
Microsemi Corporation
Description :
IGBT 1200V 113A 625W TMAX
Series :
POWER MOS 7®
Part Status :
Active
IGBT Type :
PT
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
113A
Current - Collector Pulsed (Icm) :
170A
Vce(on) (Max) @ Vge, Ic :
3.9V @ 15V, 45A
Power - Max :
625W
Switching Energy :
900µJ (on), 905µJ (off)
Input Type :
Standard
Gate Charge :
185nC
Td (on/off) @ 25°C :
18ns/100ns
Test Condition :
600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3 Variant
Supplier Device Package :
-
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