SI7852DP-T1-E3 Pricing (USD) [88646pcs Stock]
- 1 pcs$0.44109
- 3,000 pcs$0.37191
- Part Number:
- SI7852DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 80V 7.6A PPAK SO-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI7852DP-T1-E3 electronic components. SI7852DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7852DP-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7852DP-T1-E3 Product Attributes
Part Number :
SI7852DP-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 80V 7.6A PPAK SO-8
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
16.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
1.9W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® SO-8
Package / Case :
PowerPAK® SO-8
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