Vishay Semiconductor Diodes Division - ESH3B-E3/9AT

KEY Part #: K6456977

ESH3B-E3/9AT Pricing (USD) [286357pcs Stock]

  • 1 pcs$0.12917
  • 3,500 pcs$0.11706

Part Number:
ESH3B-E3/9AT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 3A DO214AB. Rectifiers 100V 3.0A 25ns Glass Passivated
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ESH3B-E3/9AT electronic components. ESH3B-E3/9AT can be shipped within 24 hours after order. If you have any demands for ESH3B-E3/9AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH3B-E3/9AT Product Attributes

Part Number : ESH3B-E3/9AT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 3A DO214AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 40ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AB, SMC
Supplier Device Package : DO-214AB (SMC)
Operating Temperature - Junction : -55°C ~ 175°C

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