BSC12DN20NS3GATMA1 Pricing (USD) [179561pcs Stock]
- 1 pcs$0.20599
- Part Number:
- BSC12DN20NS3GATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 11.3A 8TDSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSC12DN20NS3GATMA1 electronic components. BSC12DN20NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC12DN20NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC12DN20NS3GATMA1 Product Attributes
Part Number :
BSC12DN20NS3GATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 11.3A 8TDSON
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
125 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id :
4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
8.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
680pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
50W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TDSON-8
Package / Case :
8-PowerTDFN
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