[12608pcs Stock]
- Part Number:
- IRFIBF30G
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 900V 1.9A TO220FP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFIBF30G electronic components. IRFIBF30G can be shipped within 24 hours after order. If you have any demands for IRFIBF30G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFIBF30G Product Attributes
Part Number :
IRFIBF30G
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 900V 1.9A TO220FP
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.7 Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3 Full Pack, Isolated Tab
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