IRLS3813PBF Pricing (USD) [2605pcs Stock]
- 1,000 pcs$0.57811
- Part Number:
- IRLS3813PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 160A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - SCRs, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRLS3813PBF electronic components. IRLS3813PBF can be shipped within 24 hours after order. If you have any demands for IRLS3813PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLS3813PBF Product Attributes
Part Number :
IRLS3813PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 160A D2PAK
Series :
HEXFET®
Part Status :
Discontinued at Digi-Key
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.95 mOhm @ 148A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
83nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8020pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
195W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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