Diodes Incorporated - DMTH8012LK3Q-13

KEY Part #: K6403344

DMTH8012LK3Q-13 Pricing (USD) [186854pcs Stock]

  • 1 pcs$0.19894
  • 2,500 pcs$0.19795

Part Number:
DMTH8012LK3Q-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET NCH 80V 50A TO252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH8012LK3Q-13 electronic components. DMTH8012LK3Q-13 can be shipped within 24 hours after order. If you have any demands for DMTH8012LK3Q-13, Please submit a Request for Quotation here or send us an email:
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DMTH8012LK3Q-13 Product Attributes

Part Number : DMTH8012LK3Q-13
Manufacturer : Diodes Incorporated
Description : MOSFET NCH 80V 50A TO252
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 46.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2051pF @ 40V
FET Feature : -
Power Dissipation (Max) : 2.6W (Ta)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63