Vishay Semiconductor Diodes Division - VS-1N1200RA

KEY Part #: K6440776

VS-1N1200RA Pricing (USD) [20330pcs Stock]

  • 1 pcs$1.53364
  • 10 pcs$1.37631
  • 25 pcs$1.30095
  • 100 pcs$1.06967
  • 250 pcs$1.01480
  • 500 pcs$0.91057
  • 1,000 pcs$0.76795
  • 2,500 pcs$0.73138

Part Number:
VS-1N1200RA
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 12A DO203AA. Rectifiers 100 Volt 12 Amp
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Transistors - JFETs, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Power Driver Modules and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-1N1200RA electronic components. VS-1N1200RA can be shipped within 24 hours after order. If you have any demands for VS-1N1200RA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-1N1200RA Product Attributes

Part Number : VS-1N1200RA
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 12A DO203AA
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.35V @ 12A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 2.5mA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-203AA
Operating Temperature - Junction : -65°C ~ 200°C

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