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Samsung Semiconductor - K4B1G1646I-BYNB

KEY Part #: K7359648

[22839pcs Stock]

    Part Number:
    K4B1G1646I-BYNB
    Manufacturer:
    Samsung Semiconductor
    Detailed description:
    1 Gb 64M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : LPDDR4X, MODULE, LPDDR5, DDR3, HBM Aquabolt, HBM Flarebolt, GDDR5 and LPDDR3 ...
    Competitive Advantage:
    We specialize in Samsung Semiconductor K4B1G1646I-BYNB electronic components. K4B1G1646I-BYNB can be shipped within 24 hours after order. If you have any demands for K4B1G1646I-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G1646I-BYNB Product Attributes

    Part Number : K4B1G1646I-BYNB
    Manufacturer : Samsung Semiconductor
    Description : 1 Gb 64M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Series : DDR3
    Density : 1 Gb
    Org. : 64M x 16
    Speed : 2133 Mbps
    Voltage : 1.35 V
    Temp. : 0 ~ 85 °C
    Package : 96FBGA

    Latest News

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    Bringing Artificial Intelligence to Devices Everywhere
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    How Will 5G Impact on Memory?
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Evolving Mobile Solutions: Samsung at MWC 2018
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    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    High Bandwidth Memory is Catching on for Data-intensive Computing
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