Microsemi Corporation - JANTXV2N6770

KEY Part #: K6403701

[2266pcs Stock]


    Part Number:
    JANTXV2N6770
    Manufacturer:
    Microsemi Corporation
    Detailed description:
    MOSFET N-CH.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays and Transistors - JFETs ...
    Competitive Advantage:
    We specialize in Microsemi Corporation JANTXV2N6770 electronic components. JANTXV2N6770 can be shipped within 24 hours after order. If you have any demands for JANTXV2N6770, Please submit a Request for Quotation here or send us an email:
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    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    JANTXV2N6770 Product Attributes

    Part Number : JANTXV2N6770
    Manufacturer : Microsemi Corporation
    Description : MOSFET N-CH
    Series : Military, MIL-PRF-19500/543
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 500V
    Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 500 mOhm @ 12A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : -
    FET Feature : -
    Power Dissipation (Max) : 4W (Ta), 150W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-204AE (TO-3)
    Package / Case : TO-204AE

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