FQA19N60 Pricing (USD) [20155pcs Stock]
- 1 pcs$2.26960
- 10 pcs$2.02766
- 100 pcs$1.66258
- Part Number:
- FQA19N60
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 18.5A TO-3P.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQA19N60 electronic components. FQA19N60 can be shipped within 24 hours after order. If you have any demands for FQA19N60, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQA19N60 Product Attributes
Part Number :
FQA19N60
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 18.5A TO-3P
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3PN
Package / Case :
TO-3P-3, SC-65-3
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