Manufacturer :
Taiwan Semiconductor Corporation
Description :
650V 7A SINGLE N-CHANNEL POWER M
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.35 Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id :
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1124pF @ 50V
Power Dissipation (Max) :
50W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ITO-220
Package / Case :
TO-220-3 Full Pack, Isolated Tab