IXYS - IXFH150N17T2

KEY Part #: K6416532

IXFH150N17T2 Pricing (USD) [14956pcs Stock]

  • 1 pcs$3.04614
  • 30 pcs$3.03099

Part Number:
IXFH150N17T2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 175V 150A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Thyristors - SCRs - Modules and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in IXYS IXFH150N17T2 electronic components. IXFH150N17T2 can be shipped within 24 hours after order. If you have any demands for IXFH150N17T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH150N17T2 Product Attributes

Part Number : IXFH150N17T2
Manufacturer : IXYS
Description : MOSFET N-CH 175V 150A TO-247
Series : GigaMOS™, HiPerFET™, TrenchT2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 175V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 233nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 14600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 880W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AD (IXFH)
Package / Case : TO-247-3

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