[1080pcs Stock]
- Part Number:
- IPU103N08N3 G
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 80V 50A TO251-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Diodes - Zener - Single, Thyristors - SCRs, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPU103N08N3 G electronic components. IPU103N08N3 G can be shipped within 24 hours after order. If you have any demands for IPU103N08N3 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU103N08N3 G Product Attributes
Part Number :
IPU103N08N3 G
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 80V 50A TO251-3
Series :
OptiMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
10.3 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2410pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
100W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO251-3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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