Toshiba Semiconductor and Storage - 2SK879-Y(TE85L,F)

KEY Part #: K6521269

2SK879-Y(TE85L,F) Pricing (USD) [663036pcs Stock]

  • 1 pcs$0.06167
  • 3,000 pcs$0.06137

Part Number:
2SK879-Y(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
JFET N-CH 0.1W USM.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - RF, Transistors - FETs, MOSFETs - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage 2SK879-Y(TE85L,F) electronic components. 2SK879-Y(TE85L,F) can be shipped within 24 hours after order. If you have any demands for 2SK879-Y(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SK879-Y(TE85L,F) Product Attributes

Part Number : 2SK879-Y(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : JFET N-CH 0.1W USM
Series : -
Part Status : Active
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 1.2mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 8.2pF @ 10V
Resistance - RDS(On) : -
Power - Max : 100mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM

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