Vishay Semiconductor Diodes Division - VS-20ETF10-M3

KEY Part #: K6434269

VS-20ETF10-M3 Pricing (USD) [23637pcs Stock]

  • 1 pcs$1.74363
  • 1,000 pcs$1.57247

Part Number:
VS-20ETF10-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1KV 20A TO220AC. Rectifiers New Input Diodes - TO-220-e3
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs - Modules, Power Driver Modules, Diodes - Bridge Rectifiers and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-20ETF10-M3 electronic components. VS-20ETF10-M3 can be shipped within 24 hours after order. If you have any demands for VS-20ETF10-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-20ETF10-M3 Product Attributes

Part Number : VS-20ETF10-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 20A TO220AC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 20A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 20A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 95ns
Current - Reverse Leakage @ Vr : 100µA @ 1000V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -40°C ~ 150°C

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