Vishay Siliconix - SUD50P06-15-GE3

KEY Part #: K6416597

SUD50P06-15-GE3 Pricing (USD) [80704pcs Stock]

  • 1 pcs$0.48449
  • 2,000 pcs$0.40854

Part Number:
SUD50P06-15-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 60V 50A TO-252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs, Transistors - Programmable Unijunction, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Siliconix SUD50P06-15-GE3 electronic components. SUD50P06-15-GE3 can be shipped within 24 hours after order. If you have any demands for SUD50P06-15-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUD50P06-15-GE3 Product Attributes

Part Number : SUD50P06-15-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 60V 50A TO-252
Series : TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 15 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 165nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4950pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 113W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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