FQU3N50CTU Pricing (USD) [90796pcs Stock]
- 1 pcs$0.43064
- 10 pcs$0.38256
- 100 pcs$0.28587
- 500 pcs$0.22169
- 1,000 pcs$0.17502
- Part Number:
- FQU3N50CTU
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 500V 2.5A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - RF, Thyristors - TRIACs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQU3N50CTU electronic components. FQU3N50CTU can be shipped within 24 hours after order. If you have any demands for FQU3N50CTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQU3N50CTU Product Attributes
Part Number :
FQU3N50CTU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 500V 2.5A IPAK
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
365pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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