IXFX30N100Q2 Pricing (USD) [3240pcs Stock]
- 1 pcs$14.77587
- 30 pcs$14.70236
- Part Number:
- IXFX30N100Q2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 30A PLUS247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Thyristors - TRIACs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in IXYS IXFX30N100Q2 electronic components. IXFX30N100Q2 can be shipped within 24 hours after order. If you have any demands for IXFX30N100Q2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX30N100Q2 Product Attributes
Part Number :
IXFX30N100Q2
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 30A PLUS247
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
186nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
8200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
735W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS247™-3
Package / Case :
TO-247-3
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