JANTXV1N5552US Pricing (USD) [4931pcs Stock]
- 1 pcs$8.82883
- 100 pcs$8.78491
- Part Number:
- JANTXV1N5552US
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- DIODE GEN PURP 600V 3A B-MELF. ESD Suppressors / TVS Diodes MIL, QPL PART, 3A 600V STANDARD RECT - SQ END CAPS
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Microsemi Corporation JANTXV1N5552US electronic components. JANTXV1N5552US can be shipped within 24 hours after order. If you have any demands for JANTXV1N5552US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTXV1N5552US Product Attributes
Part Number :
JANTXV1N5552US
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 600V 3A B-MELF
Series :
Military, MIL-PRF-19500/420
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
3A
Voltage - Forward (Vf) (Max) @ If :
1.2V @ 9A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
2µs
Current - Reverse Leakage @ Vr :
1µA @ 600V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
SQ-MELF, B
Supplier Device Package :
D-5B
Operating Temperature - Junction :
-65°C ~ 175°C
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