[8654pcs Stock]
- Part Number:
- SUD50N10-18P-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 100V 8.2A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SUD50N10-18P-GE3 electronic components. SUD50N10-18P-GE3 can be shipped within 24 hours after order. If you have any demands for SUD50N10-18P-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUD50N10-18P-GE3 Product Attributes
Part Number :
SUD50N10-18P-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 100V 8.2A DPAK
Series :
TrenchFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
8.2A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
18.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
3W (Ta), 136.4W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252, (D-Pak)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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