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ON Semiconductor - NTGS3443T1G

KEY Part #: K6418330

NTGS3443T1G Pricing (USD) [684285pcs Stock]

  • 1 pcs$0.05405
  • 3,000 pcs$0.05154
Part Number:
NTGS3443T1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 20V 2.2A 6-TSOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor NTGS3443T1G electronic components. NTGS3443T1G can be shipped within 24 hours after order. If you have any demands for NTGS3443T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTGS3443T1G Product Attributes

Part Number : NTGS3443T1G
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 20V 2.2A 6-TSOP
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 565pF @ 5V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-TSOP
Package / Case : SOT-23-6

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