IPN60R3K4CEATMA1 Pricing (USD) [514616pcs Stock]
- 1 pcs$0.07187
- 3,000 pcs$0.06317
- Part Number:
- IPN60R3K4CEATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET NCH 600V 2.6A SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPN60R3K4CEATMA1 electronic components. IPN60R3K4CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN60R3K4CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN60R3K4CEATMA1 Product Attributes
Part Number :
IPN60R3K4CEATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET NCH 600V 2.6A SOT223
Series :
CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs :
4.6nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
93pF @ 100V
FET Feature :
Super Junction
Power Dissipation (Max) :
5W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-SOT223
Package / Case :
SOT-223-3
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