IRF100B201 Pricing (USD) [31701pcs Stock]
- 1 pcs$1.30006
- 10 pcs$1.17270
- 100 pcs$0.89407
- 500 pcs$0.69538
- 1,000 pcs$0.57618
- Part Number:
- IRF100B201
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 192A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF100B201 electronic components. IRF100B201 can be shipped within 24 hours after order. If you have any demands for IRF100B201, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF100B201 Product Attributes
Part Number :
IRF100B201
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 192A TO-220AB
Series :
HEXFET®, StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.2 mOhm @ 115A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
255nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9500pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
441W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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