IXYS - IXFT50N30Q3

KEY Part #: K6394371

IXFT50N30Q3 Pricing (USD) [8005pcs Stock]

  • 1 pcs$5.91860
  • 10 pcs$5.32542
  • 100 pcs$4.37853
  • 500 pcs$3.66851

Part Number:
IXFT50N30Q3
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 300V 50A TO-268.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in IXYS IXFT50N30Q3 electronic components. IXFT50N30Q3 can be shipped within 24 hours after order. If you have any demands for IXFT50N30Q3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFT50N30Q3 Product Attributes

Part Number : IXFT50N30Q3
Manufacturer : IXYS
Description : MOSFET N-CH 300V 50A TO-268
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 300V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3165pF @ 25V
FET Feature : -
Power Dissipation (Max) : 690W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-268
Package / Case : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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