Part Number :
APTGTQ100H65T3G
Manufacturer :
Microsemi Corporation
Description :
POWER MODULE - IGBT
Configuration :
Full Bridge
Voltage - Collector Emitter Breakdown (Max) :
650V
Current - Collector (Ic) (Max) :
100A
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 100A
Current - Collector Cutoff (Max) :
100µA
Input Capacitance (Cies) @ Vce :
6nF @ 25V
Operating Temperature :
-40°C ~ 175°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SP3F