Vishay Semiconductor Diodes Division - EGF1B-E3/67A

KEY Part #: K6452934

EGF1B-E3/67A Pricing (USD) [388232pcs Stock]

  • 1 pcs$0.09527
  • 6,000 pcs$0.08533

Part Number:
EGF1B-E3/67A
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1A DO214BA. Rectifiers 1.0 Amp 100V 50ns
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Diodes - RF and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division EGF1B-E3/67A electronic components. EGF1B-E3/67A can be shipped within 24 hours after order. If you have any demands for EGF1B-E3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGF1B-E3/67A Product Attributes

Part Number : EGF1B-E3/67A
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A DO214BA
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214BA
Supplier Device Package : DO-214BA (GF1)
Operating Temperature - Junction : -65°C ~ 175°C

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