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  5. 2SJ661-DL-1E

ON Semiconductor - 2SJ661-DL-1E

KEY Part #: K6399276

2SJ661-DL-1E Pricing (USD) [70588pcs Stock]

  • 1 pcs$0.55393
  • 800 pcs$0.53468
Part Number:
2SJ661-DL-1E
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 60V 38A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - FETs, MOSFETs - Arrays and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in ON Semiconductor 2SJ661-DL-1E electronic components. 2SJ661-DL-1E can be shipped within 24 hours after order. If you have any demands for 2SJ661-DL-1E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SJ661-DL-1E Product Attributes

Part Number : 2SJ661-DL-1E
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 60V 38A
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 39 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4360pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1.65W (Ta), 65W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263-2
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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