Infineon Technologies - IRFH8321TRPBF

KEY Part #: K6420697

IRFH8321TRPBF Pricing (USD) [234106pcs Stock]

  • 1 pcs$0.15799
  • 4,000 pcs$0.13550

Part Number:
IRFH8321TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N CH 30V 21A PQFN5X6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - Special Purpose, Power Driver Modules, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRFH8321TRPBF electronic components. IRFH8321TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8321TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFH8321TRPBF Product Attributes

Part Number : IRFH8321TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N CH 30V 21A PQFN5X6
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 59nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 3.4W (Ta), 54W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PQFN (5x6)
Package / Case : 8-TQFN Exposed Pad