FESB16BT-E3/45 Pricing (USD) [100029pcs Stock]
- 1 pcs$0.39089
- 1,000 pcs$0.33510
- Part Number:
- FESB16BT-E3/45
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 100V 16A TO263AB. Rectifiers 16 Amp 100 Volt 35ns
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division FESB16BT-E3/45 electronic components. FESB16BT-E3/45 can be shipped within 24 hours after order. If you have any demands for FESB16BT-E3/45, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FESB16BT-E3/45 Product Attributes
Part Number :
FESB16BT-E3/45
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 100V 16A TO263AB
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
100V
Current - Average Rectified (Io) :
16A
Voltage - Forward (Vf) (Max) @ If :
975mV @ 16A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
35ns
Current - Reverse Leakage @ Vr :
10µA @ 100V
Capacitance @ Vr, F :
175pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
TO-263AB
Operating Temperature - Junction :
-65°C ~ 150°C
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