Infineon Technologies - DF650R17IE4BOSA1

KEY Part #: K6533754

DF650R17IE4BOSA1 Pricing (USD) [230pcs Stock]

  • 1 pcs$201.67426

Part Number:
DF650R17IE4BOSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOD IGBT 650A PRIME2-1.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Power Driver Modules, Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Infineon Technologies DF650R17IE4BOSA1 electronic components. DF650R17IE4BOSA1 can be shipped within 24 hours after order. If you have any demands for DF650R17IE4BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF650R17IE4BOSA1 Product Attributes

Part Number : DF650R17IE4BOSA1
Manufacturer : Infineon Technologies
Description : MOD IGBT 650A PRIME2-1
Series : PrimePack™2
Part Status : Active
IGBT Type : -
Configuration : Single
Voltage - Collector Emitter Breakdown (Max) : 1700V
Current - Collector (Ic) (Max) : 930A
Power - Max : 4150W
Vce(on) (Max) @ Vge, Ic : 2.45V @ 15V, 650A
Current - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 54nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

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