Infineon Technologies - IPB065N10N3GATMA1

KEY Part #: K6418653

IPB065N10N3GATMA1 Pricing (USD) [72145pcs Stock]

  • 1 pcs$0.54197
  • 1,000 pcs$0.49715

Part Number:
IPB065N10N3GATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH TO263-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - SCRs, Transistors - JFETs, Diodes - Zener - Arrays, Diodes - Zener - Single, Thyristors - TRIACs, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IPB065N10N3GATMA1 electronic components. IPB065N10N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB065N10N3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB065N10N3GATMA1 Product Attributes

Part Number : IPB065N10N3GATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH TO263-3
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4910pF @ 50V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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