NTTFS4939NTWG Pricing (USD) [128234pcs Stock]
- 1 pcs$0.28988
- 5,000 pcs$0.28844
- Part Number:
- NTTFS4939NTWG
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 30V 8.9A 8WDFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - JFETs, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTTFS4939NTWG electronic components. NTTFS4939NTWG can be shipped within 24 hours after order. If you have any demands for NTTFS4939NTWG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTTFS4939NTWG Product Attributes
Part Number :
NTTFS4939NTWG
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 30V 8.9A 8WDFN
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8.9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1979pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
850mW (Ta), 29.8W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-WDFN (3.3x3.3)
Package / Case :
8-PowerWDFN
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